• S Bhattacharya

      Articles written in Bulletin of Materials Science

    • Preparation and characterization of Pb1−xSnxTe pseudobinary alloy semiconductors

      S C Das A K Chaudhuri S Bhattacharya

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      Ap-type pseudo-binary alloy semiconductor, Pb0·3Sn0·7Te, has been prepared fromp-type specimens of PbTe and SnTe and lattice constants determined with an accuracy of 0.0001 nm. Vacuum annealing of Pb0·3Sn0·7 Te reveals two new x-ray powder diffraction lines bearing indices (444) and (800), while others become more sharp, CuKa-doublets get clearly resolved and the lattice constant is increased by ∼ 0·0002 nm. Slight deviation from Vegard’s law linearity is observed showing that the sample must be considered as ternary in nature. Thin films deposited on mica and glass substrates kept at room temperature are found to have a little higher SnTe content. The effective carrier concentration calculated from Hall measurements at room temperature is ∼ 3·4×1026 m−3.

    • Studies on $n$- and $p$-type metal oxide compounds for thermoelectric device fabrication

      APOORVA P JOSHI S BHATTACHARYA S RAYAPROL

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      We report the high-temperature thermoelectric properties of electron- and hole-doped calcium manganese oxidematerials, which exhibit potential of a thermoelectric device for conversion of wasteful thermal energy into useful electricalenergy. Electron-doped Ca$_{0.9}$R$_{0.1}$MnO$_3$ (R $=$ La, Yb) and hole-doped Ca$_4$Mn$_{2.85}$Nb$_{0.15}$O$_{10}$ manganites chosen for the present study were prepared by solid-state reaction of starting compounds and characterized by powder X-ray diffraction. Electrical resistivity and thermopower were measured as a function of temperature to determine the power factor for all the three compounds studied. We discuss these results according to their application potential as a thermoelectric device.

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