• SUSHEEL KUMAR GUNDANNA

      Articles written in Bulletin of Materials Science

    • XTEM study of low-energy ion-beam synthesized Ge nanoclusters inside SiO$_x$ matrix

      SUSHEEL KUMAR GUNDANNA PUSPENDU GUHA B SUNDARAVEL UMANANDA M BHATTA

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      In this work, a system of embedded Ge nanoclusters (NCs) has been fabricated inside a thermally grown SiO$_x$ matrix via a low-energy ion-implantation technique. The low-energy ion-implantation technique gives the flexibility to choose the number of ions to be implanted and depth at which the ions to be placed below the SiO$_x$ surface. This can be achieved by choosing the proper fluence and energy. Thirty kilo electron volts Ge ions have been implanted into a SiO$_x$ matrix (thermally grown) on Si(100) substrate. Ge concentration has been varied by choosing three different fluences ($2.5\times 10^{15}$, $5 \times 10^{15}$ and $1 \times 10^{16}$ ions cm$^{-2}$). Further, ex situ annealing was carried at 800$^{\circ}$C under an inert atmosphere. Fluence-dependent distribution of Ge NCs post-annealing has been explained using Raman spectroscopy, photoluminescence spectroscopy (PL), Rutherford backscattering spectrometry (RBS) and cross-sectional transmission electron microscopy (XTEM) analysis.

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