Articles written in Bulletin of Materials Science
Volume 35 Issue 5 October 2012 pp 713-718
We investigate electron transport properties in a deformed (8, 0) silicon carbide nanotube by applying self consistent non-equilibrium Green’s function formalism in combination with the density-functional theory to a two-probe molecular junction constructed from deformed nanotube. The results suggest significant reduction in threshold voltage in the case of both radially compressed and axially elongated (8, 0) SiCNTs, a large difference in current–voltage characteristics was observed. Analysis of frontier molecular orbitals (FMO) and transmission spectrum show bandgap reduction in deformed nanotubes. Deformation introduces electronic states near the Fermi level, enhancing the conduction properties of (8, 0) SiCNT. The FMOs and the orbitals corresponding to peaks in 𝑇(𝐸) around Fermi level obviously has some major contributions from the deformed site. However, localization of the electronic state near the Fermi level is weak in (8, 0) SiCNT, possibly because of its large bandgap.
Volume 38 Issue 7 December 2015 pp 1705-1709
The effect of tailoring the graphene sheets used as channel in a graphene nanoribbon field effect transistor (GNRFET) was investigated. The study was performed using self-consistent solution of Poisson's and Schrodinger's equation in combination with non-equilibrium Green's function (NEGF) formalism. Graphene sheet channel was tailored into different shapes and found that with the introduction of edge roughness along the border of GNR sheet the bandgap of GNRFET channel increases. Tailoring the channel decreases mobility and transmission probability to a great extent and thus the performance of I–V characteristics of GNRFET degrades.
Volume 39 Issue 5 September 2016 pp 1303-1309
In this paper, device performance of graphene nanoribbon field effect transistor (GNRFET) with different doping concentrations in different parts of the channel is reported. The study is performed by using atomistic simulations based on self-consistent solution of Schrodinger’s and Poisson’s equation within the non-equilibrium Green’s function formalism. The transfer and output characteristics suggest that device performance with $n$-type doping in the channel is better with smaller supply voltage compared to higher supply voltage. On increasing the $n$-type doping concentration, we obtained better on-current and output characteristics in comparison with undoped and $p$-type doped channel GNRFET. Further, we introduced step-doping profile in the graphene nanoribbon (GNR) channel and found that the device gives better on-current and good saturation condition when compared to undoped or uniformly-doped channel.
Volume 42 | Issue 1