Articles written in Bulletin of Materials Science
Volume 3 Issue 2 July 1981 pp 157-161 Biswas Memorial Symposium On The Chemistry And Physics of Solids, Electronic Properties Of Materials
Schottky barrier diodes with near-ideal characteristics have been fabricated on amorphous hydrogenated silicon prepared by decomposition of a mixture of 10% silane and 90% hydrogen. The interface properties are found to be stable up to heat treatment of 300°C. From a detailed investigation of dark and photovoltaic properties it is concluded that the density of states in the mobility gap is sufficiently small so that there is no significant carrier recombination in the space charge region.
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