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SLAH HLALI
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Volume 40 Issue 1 February 2017 pp 67-78
SLAH HLALI NEILA HIZEM ADEL KALBOUSSI
In this paper the electrical characteristics of metal–insulator–semiconductor (MIS) and metal–insulator–semiconductor–insulator–metal (MISIM) capacitors with (100)-oriented p-type silicon as a substrate under different high-$k$ gate dielectrics (SiO$_2$, HfO$_2$, La$_2$O$_3$ and TiO$_2$) are investigated in the semi-classical and quantum mechanical models. We review the quantum correction in the inversion layer charge density for p-doped structures. The purpose of this paper is to point out the differences between the semi-classical and quantum mechanical charge descriptions at the insulator–semiconductor interface and the effect of the type of oxide and their position (gate oxide or buried oxide) in our structures. In particular, capacitance–voltage ($C–V$), relative position of the sub-band energies and their wavefunctions are studied to examine qualitatively and quantitatively the electron states and charging mechanisms in our devices. We find that parameters such as threshold voltage and device trans-conductance are enormously sensitive to the proper treatment of quantization effects.
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Bulletin of Materials Science
Volume 45, 2022
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Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
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Posted on July 25, 2019Click here for Editorial Note on CAP Mode
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