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Volume 46 All articles Published: 28 December 2022 Article ID 0005
SAHAR MORADI ATEFEH NAZARI SETAYESH HASSAN SEDGHI
The pure, Co- and Ni-doped SnO$_2$ nanostructured films were coated on glass by spin coating method. The influence of doping Ni and Co metal ions on optoelectronic and structural properties of the pure film were analysed by X-ray diffraction (XRD) and spectroscopic ellipsometry (SE) techniques. XRD results revealed that substitution of Co$^{2+}$ and Ni$^{2+}$ into the tetragonal rutile structure of SnO$_2$ changes the lattice parameters (
a andc ) slightly and decreases the grain size (d ). The refractive index (n ), the extinction coefficient (k ), optical transmittance (T ) and dielectric constant (${\varepsilon}$) were determined for samples using SE technique. According to SE analysis, the incorporation of Ni and Co ions decreases the optical transparency (T% ) and increases the ratio of charge carrier concentration to effective mass (${N/m}^*$). The results confirmed that the ${N/m}^*$ increases lead to decreasing of the sheet resistance ($R_{sh}$) values of doped SnO$_2$ films compared to the pure one. The bandgap energy ($E_g$) of films were also calculated. According to the literature, the $E_g$ value of the pure SnO$_2$ thin film is 3.8 eV. This amount decreased to 3.7 and 3.55 eV for Co- and Ni-doped SnO$_2$ films, respectively. The $E_g$ value decrease by Co and Ni incorporation is related to the increase of carrier concentration due to the Moss-Burstein effect.
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Bulletin of Materials Science
Volume 46, 2023
All articles
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