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S Subbarao
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Volume 24 Issue 3 June 2001 pp 273-279 Chemical Vapour Deposition
SiC fibre by chemical vapour deposition on tungsten filament
R V Krishnarao J Subrahmanyam S Subbarao
A CVD system for the production of continuous SiC fibre was set up. The process of SiC coating on 19 𝜇m diameter tungsten substrate was studied. Methyl trichloro silane (CH3SiCl3) and hydrogen reactants were used. Effect of substrate temperature (1300–1500°C) and concentration of reactants on the formation of SiC coating were studied. SiC coatings of negligible thickness were formed at very low flow rates of hydrogen (5 × 10–5 m3/min) and CH3SiCl3 (1.0 × 10–4 m3/min of Ar). Uneven coatings and brittle fibres were formed at very high concentrations of CH3SiCl3 (6 × 10–4 m3/min of Ar). The flow rates of CH3SiCl3 and hydrogen were adjusted to get SiC fibre with smooth surface. The structure and morphology of SiC fibres were evaluated.
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Bulletin of Materials Science
Volume 46, 2023
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