S R Bhattacharyya
Articles written in Bulletin of Materials Science
Volume 31 Issue 1 February 2008 pp 73-82 Thin Films
Si-doped GaN films in polycrystalline form were deposited on quartz substrates at deposition temperatures ranging from 300–623 K using r.f. sputtering technique. Electrical, optical and microstructural properties were studied for these films. It was observed that films deposited at room temperature contained mainly hexagonal gallium nitride (ℎ-GaN) while films deposited at 623 K were predominantly cubic (𝑐-GaN) in nature. The films deposited at intermediate temperatures were found to contain both the hexagonal and cubic phases of GaN. Studies on the variation of conductivity with temperature indicated Mott’s hopping for films containing 𝑐-GaN while Efros and Shklovskii (E–S) hopping within the Coulomb gap was found to dominate the carrier transport mechanism in the films containing ℎ-GaN. A crossover from Mott’s hopping to E–S hopping in the `soft’ Coulomb gap was noticed with lowering of temperature for films containing mixed phases of GaN. The relative intensity of the PL peak at ∼ 2.73 eV to that for peak at ∼ 3.11 eV appearing due to transitions from deep donor to valence band or shallow acceptors decreased significantly at higher temperature. Variation of band gap showed a bowing behaviour with the amount of cubic phase present in the films.
Volume 36 Issue 2 April 2013 pp 223-229
In this study, pure and manganese-doped zinc oxide (Mn:ZnO) thin films were deposited on quartz substrate following successive ion layer adsorption and reaction (SILAR) technique. The film growth rate was found to increase linearly with number of dipping cycle. Characterization techniques of XRD, SEM with EDX and UV–visible spectra measurement were done to investigate the effect of Mn doping on the structural and optical properties of Mn:ZnO thin films. Structural characterization by X-ray diffraction reveals that polycrystalline nature of the films increases with increasing manganese incorporation. Particle size evaluated using X-ray line broadening analysis shows decreasing trend with increasing manganese impurification. The average particle size for pure ZnO is 29.71nm and it reduces to 23.76nm for 5%Mn-doped ZnO. The strong preferred c-axis orientation is lost due to manganese (Mn) doping. The degree of polycrystallinity increases and the average microstrain in the films decreases with increasing Mn incorporation. Incorporation of Mn was confirmed from elemental analysis using EDX. As the Mn doping concentration increases the optical bandgap of the films decreases for the range of Mn doping reported here. The value of fundamental absorption edge is 3.22 eV for pure ZnO and it decreases to 3.06 eV for 5%Mn:ZnO.
Volume 45, 2022
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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