• S Mondal

      Articles written in Bulletin of Materials Science

    • Study of indentation induced cracks in MoSi2-reaction bonded SiC ceramics

      O P Chakrabarti P K Das S Mondal

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      MoSi2–RBSC composite samples were prepared by infiltration of Si–2 at.% Mo melt into a preform of commercial SiC and petroleum coke powder. The infiltrated sample had a density > 92% of the theoretical density (TD) and microstructurally contained SiC, MoSi2, residual Si and unreacted C. The material was tested for indentation fracture toughness at room temperature with a Vicker’s indenter and KIC was found to be 4.42 MPa√m which is around 39% higher than the conventional RBSC material. Enhancement in indentation fracture toughness is explained in terms of bowing of propagating cracks through MoSi2/SiC interface which is under high thermal stress arising from the thermal expansion mismatch between MoSi2 and SiC.

    • Preparation of cadmium-doped ZnO thin films by SILAR and their characterization

      S Mondal P Mitra

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      Cadmium-doped zinc oxide (Cd : ZnO) thin films were deposited from sodium zincate bath following a chemical dipping technique called successive ion layer adsorption and reaction (SILAR). Structural characterization by X-ray diffraction reveals that polycrystalline nature of the films increases with increasing cadmium incorporation. Particle size evaluated using X-ray line broadening analysis shows decreasing trend with increasing cadmium impurification. The average particle size for pure ZnO is 36.73nm and it reduces to 29.9 nm for 10% Cd:ZnO, neglecting strain broadening. The strong preferred c-axis orientation is lost due to cadmium doping and degree of polycrystallinity of the films also increases with increasing Cd incorporation. Incorporation of cadmium was confirmed from elemental analysis using EDX. The optical bandgap of the films decreases with increasing Cd dopant. The value of fundamental absorption edge is 3.18 eV for pure ZnO and it decreases to 3.11 eV for 10% Cd:ZnO.

    • Preparation of manganese-doped ZnO thin films and their characterization

      S Mondal S R Bhattacharyya P Mitra

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      In this study, pure and manganese-doped zinc oxide (Mn:ZnO) thin films were deposited on quartz substrate following successive ion layer adsorption and reaction (SILAR) technique. The film growth rate was found to increase linearly with number of dipping cycle. Characterization techniques of XRD, SEM with EDX and UV–visible spectra measurement were done to investigate the effect of Mn doping on the structural and optical properties of Mn:ZnO thin films. Structural characterization by X-ray diffraction reveals that polycrystalline nature of the films increases with increasing manganese incorporation. Particle size evaluated using X-ray line broadening analysis shows decreasing trend with increasing manganese impurification. The average particle size for pure ZnO is 29.71nm and it reduces to 23.76nm for 5%Mn-doped ZnO. The strong preferred c-axis orientation is lost due to manganese (Mn) doping. The degree of polycrystallinity increases and the average microstrain in the films decreases with increasing Mn incorporation. Incorporation of Mn was confirmed from elemental analysis using EDX. As the Mn doping concentration increases the optical bandgap of the films decreases for the range of Mn doping reported here. The value of fundamental absorption edge is 3.22 eV for pure ZnO and it decreases to 3.06 eV for 5%Mn:ZnO.

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