S K Samanta
Articles written in Bulletin of Materials Science
Volume 24 Issue 6 December 2001 pp 579-582 Thin Films
ZrO2 films on silicon wafer were deposited by microwave plasma enhanced chemical vapour deposition technique using zirconium tetratert butoxide (ZTB). The structure and composition of the deposited layers were studied by fourier transform infrared spectroscopy (FTIR). The deposition rates were also studied. MOS capacitors fabricated using deposited oxides were used to characterize the electrical properties of ZrO2 films. The films showed their suitability for microelectronic applications.
Volume 26 Issue 4 June 2003 pp 365-369 Thin Films
High dielectric constant (high-𝑘) Ta2O5 films have been deposited on ZnO/𝑝-Si substrate by microwave plasma at 150°C. Structure and composition of the ZnO/𝑝-Si films have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) for chemical composition. The electrical properties of the Ta2O5/ZnO/𝑝-Si metal insulator semiconductor (MIS) structures were studied using high frequency capacitance–voltage (𝐶–𝑉), conductance–voltage (𝐺–𝑉) and current–voltage (𝐼–𝑉) characteristics. Charged trapping properties have been studied by measuring the gate voltage shift due to trapped charge generation under Fowler–Nordheim (𝐹–𝑁) constant current stressing.
Volume 26 Issue 7 December 2003 pp 693-697 Thin Films
Thin films of silicon dioxide are deposited on ZnO/𝑛-Si substrate at a low temperature using tetraethylorthosilicate (TEOS). The ZnO/𝑛-Si films have been characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The border trap density (𝑄bt) and fixed oxide charge density (𝑄f/𝑞) of the SiO2/ZnO/𝑛-Si films are found to be 3.9 × 1010 cm-2 and 1.048 × 1011 cm-2, respectively. The trapping characteristics and stress induced leakage current (SILC) have also been studied under Fowler–Nordheim (F–N) constant current stressing.
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