• S K Ray

      Articles written in Bulletin of Materials Science

    • ZrO2 as a high-𝜅 dielectric for strained SiGe MOS devices

      R Mahapatra G S Kar C B Samantaray A Dhar D Bhattacharya S K Ray

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      The potential of ZrO2 thin film as a high-𝜅 gate dielectric for scaled MOSFET devices has been studied. ZrO2 has been deposited directly on a Si0.8Ge0.2 substrate by reactive RF magnetron sputtering. An equivalent oxide thickness of < 20 Å with a leakage current of the order of 10–4 A/cm2 at 1 V has been obtained. Well-behaved capacitance–voltage characteristics with an interface state density of 2 × 1011 cm–2eV–1 have been achieved. The deposited dielectric exhibits low charge trapping under constant current stressing.

    • Temperature dependent growth and optical properties of SnO2 nanowires and nanobelts

      S P Mondal S K Ray J Ravichandran I Manna

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      SnO2 nanowires and nanobelts have been grown by the thermal evaporation of Sn powders. The growth of nanowires and nanobelts has been investigated at different temperatures (750–1000°C). The field emission scanning electron microscopic and transmission electron microscopic studies revealed the growth of nanowires and nano-belts at different growth temperatures. The growth mechanisms of the formation of the nanostructures have also been discussed. X-ray diffraction patterns showed that the nanowires and nanobelts are highly crystalline with tetragonal rutile phase. UV-visible absorption spectrum showed the bulk bandgap value (∼ 3.6 eV) of SnO2. Photoluminescence spectra demonstrated a Stokes-shifted emission in the wavelength range 558–588 nm. The Raman and Fourier transform infrared spectra revealed the formation of stoichiometric SnO2 at different growth temperatures.

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