S K Ray
Articles written in Bulletin of Materials Science
Volume 25 Issue 6 November 2002 pp 455-457
The potential of ZrO2 thin film as a high-𝜅 gate dielectric for scaled MOSFET devices has been studied. ZrO2 has been deposited directly on a Si0.8Ge0.2 substrate by reactive RF magnetron sputtering. An equivalent oxide thickness of < 20 Å with a leakage current of the order of 10–4 A/cm2 at 1 V has been obtained. Well-behaved capacitance–voltage characteristics with an interface state density of 2 × 1011 cm–2eV–1 have been achieved. The deposited dielectric exhibits low charge trapping under constant current stressing.
Volume 33 Issue 4 August 2010 pp 357-364 Thin Films and Nanomatter
SnO2 nanowires and nanobelts have been grown by the thermal evaporation of Sn powders. The growth of nanowires and nanobelts has been investigated at different temperatures (750–1000°C). The field emission scanning electron microscopic and transmission electron microscopic studies revealed the growth of nanowires and nano-belts at different growth temperatures. The growth mechanisms of the formation of the nanostructures have also been discussed. X-ray diffraction patterns showed that the nanowires and nanobelts are highly crystalline with tetragonal rutile phase. UV-visible absorption spectrum showed the bulk bandgap value (∼ 3.6 eV) of SnO2. Photoluminescence spectra demonstrated a Stokes-shifted emission in the wavelength range 558–588 nm. The Raman and Fourier transform infrared spectra revealed the formation of stoichiometric SnO2 at different growth temperatures.
Volume 42 | Issue 6
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