• S K Arora

      Articles written in Bulletin of Materials Science

    • Temperature dependence of current—voltage characteristics of Au/n-GaAs epitaxial Schottky diode

      R Singh S K Arora Renu Tyagi S K Agarwal D Kanjilal

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      The influence of temperature on current-voltage (I-V) characteristics of Au/n-GaAs Schottky diode formed on n-GaAs epitaxial layer grown by metal organic chemical vapour deposition technique has been investigated. The dopant concentration in the epitaxial layer is 1 X 1016 cm-3. The change in various parameters of the diode like Schottky barrier height (SBH), ideality factor and reverse breakdown voltage as a function of temperature in the range 80–300 K is presented. The variation of apparent Schottky barrier height and ideality factor with temperature has been explained considering lateral inhomogeneities in the Schottky barrier height in nanometer scale lengths at the metal-semiconductor interface

    • Dielectric behaviour of strontium tartrate single crystals

      S K Arora Vipul Patel Brijesh Amin Anjana Kothari

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      Strontium tartrate trihydrate (STT) crystals have been grown in silica hydrogel. Various polarization mechanisms such as atomic polarization of lattice, orientational polarization of dipoles and space charge polarization in the grown crystals have been understood using results of the measurements of dielectric constant (𝜀') and dielectric loss (tan 𝛿) as functions of frequency and temperature. Ion core type polarization is seen in the temperature range 75–180°C, and above 180°C, there is interfacial polarization for relatively lower frequency range. One observes dielectric dispersion at lower frequency presumably due to domain wall relaxation.

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