Articles written in Bulletin of Materials Science
Volume 24 Issue 6 December 2001 pp 579-582 Thin Films
ZrO2 films on silicon wafer were deposited by microwave plasma enhanced chemical vapour deposition technique using zirconium tetratert butoxide (ZTB). The structure and composition of the deposited layers were studied by fourier transform infrared spectroscopy (FTIR). The deposition rates were also studied. MOS capacitors fabricated using deposited oxides were used to characterize the electrical properties of ZrO2 films. The films showed their suitability for microelectronic applications.
Volume 26 Issue 4 June 2003 pp 365-369 Thin Films
High dielectric constant (high-𝑘) Ta2O5 films have been deposited on ZnO/𝑝-Si substrate by microwave plasma at 150°C. Structure and composition of the ZnO/𝑝-Si films have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) for chemical composition. The electrical properties of the Ta2O5/ZnO/𝑝-Si metal insulator semiconductor (MIS) structures were studied using high frequency capacitance–voltage (𝐶–𝑉), conductance–voltage (𝐺–𝑉) and current–voltage (𝐼–𝑉) characteristics. Charged trapping properties have been studied by measuring the gate voltage shift due to trapped charge generation under Fowler–Nordheim (𝐹–𝑁) constant current stressing.
Volume 26 Issue 6 October 2003 pp 643-654 Instrumentation
Epitaxial layers of silicon are grown on single crystal Si-substrate from a solution of silicon in indium using conventional graphite slider boat technique. The important problems of natural convection due to lower density of silicon compared to indium, poor wetting of substrate due to high angle of contact of indium solution on silicon substrate resulting in poor nucleation, melt removal from the growth substrate and saturation wafer associated with LPE in this technique are practically eliminated using sandwich method with simple modifications of the boat and the method of growth. Some experimental studies on the effect of different surface preparations of growth substrate are also reported. Growth results are shown and discussed. Further, improvization of slider boat to facilitate better study of growth parameters is suggested in the line of modification already carried out.
Volume 26 Issue 7 December 2003 pp 693-697 Thin Films
Thin films of silicon dioxide are deposited on ZnO/𝑛-Si substrate at a low temperature using tetraethylorthosilicate (TEOS). The ZnO/𝑛-Si films have been characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The border trap density (𝑄bt) and fixed oxide charge density (𝑄f/𝑞) of the SiO2/ZnO/𝑛-Si films are found to be 3.9 × 1010 cm-2 and 1.048 × 1011 cm-2, respectively. The trapping characteristics and stress induced leakage current (SILC) have also been studied under Fowler–Nordheim (F–N) constant current stressing.
Volume 31 Issue 3 June 2008 pp 433-439
Alloy ingots with nominal composition, Al92–𝑥Ni8La𝑥 (𝑥 = 4 to 6) and Al94–𝑥Ni6La𝑥 (𝑥 = 6, 7), were prepared by induction melting in a purified Ar atmosphere. Each ingot was inductively re-melted and rapidly solidified ribbons were obtained by ejecting the melt onto a rotating copper wheel in an argon atmosphere. The crystallization behaviour of melt-spun amorphous ribbon was investigated by means of differential scanning calorimetry (DSC), X-ray diffractometry and transmission electron microscopy. DSC showed that Al86Ni8La6 alloy undergoes a three-stage and rest of the alloys undergo a two-stage crystallization process upon heating. The phases responsible for each stage of crystallization were identified. During the first crystallization stage
Volume 42 | Issue 4