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S A Gaikwad
Articles written in Bulletin of Materials Science
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Volume 30 Issue 3 June 2007 pp 255-261 Lasers
S A Gaikwad E P Samuel D S Patil D K Gautam
Temperature dependent analysis to achieve better performance by reducing threshold current requirements and field intensity has been carried out for GaN/AlGaN heterostructure lasers. The mirror loss in the GaN cavity has been obtained as a function of temperature and cavity length. The quantum efficiency has been deduced for different values of cavity length. Dependence of recombination rate on band gap and temperature has been investigated. Threshold current density has been deduced for GaN lasers and effect of temperature on it has been investigated. The near field intensity analysis has been carried out at different temperatures for 10% aluminum mole fraction in GaN/AlGaN heterostructure lasers. Furthermore, the effective index and FWHM of near field has been investigated as a function of temperature. It has been deduced from our analysis that temperature has a dominant effect on the threshold conditions and near field intensity in the wide band gap GaN based lasers.
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Bulletin of Materials Science
Volume 46, 2023
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Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
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