• Rajesh Kumar

      Articles written in Bulletin of Materials Science

    • Synthesis of nano-carbon (nanotubes, nanofibres, graphene) materials

      Kalpana Awasthi Rajesh Kumar Himanshu Raghubanshi Seema Awasthi Ratnesh Pandey Devinder Singh T P Yadav O N Srivastava

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      In the present study, we report the synthesis of carbon nanotubes (CNTs) using a new natural precursor: castor oil. The CNTs were synthesized by spray pyrolysis of castor oil–ferrocene solution at 850°C under an Ar atmosphere. We also report the synthesis of carbon nitrogen (C–N) nanotubes using castor oil–ferrocene–ammonia precursor. The as-grown CNTs and C–N nanotubes were characterized through scanning and transmission electron microscopic techniques. Graphitic nanofibres (GNFs) were synthesized by thermal decomposition of acetylene (C2H2) gas using Ni catalyst at 600°C. As-grown GNFs reveal both planar and helical morphology. We have investigated the structural and electrical properties of multi-walled CNTs (MWNTs)–polymer (polyacrylamide (PAM)) composites. The MWNTs–PAM composites were prepared using as purified, with ball milling and functionalized MWNTs by solution cast technique and characterized through SEM. A comparative study has been made on the electrical property of these MWNTs–PAM composites with different MWNTs loadings. It is shown that the ball milling and functionalization of MWNTs improves the dispersion of MWNTs into the polymer matrix. Enhanced electrical conductivity was observed for the MWNTs–PAM composites. Graphene samples were prepared by thermal exfoliation of graphite oxide. XRD analysis confirms the formation of graphene.

    • Mechanical and morphological investigation of virgin polyethylene and silver nanoparticle-loaded nanocomposites film: comprehensive analysis of kinetic models for non-isothermal crystallization

      RAJESH KUMAR SAHOO BISHNU PRASAD PANDA SANJAY KUMAR NAYAK SMITA MOHANTY

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      This research was accomplished to examine the mechanical, morphological and crystallization kinetics study of polyethylene/silver nanoparticles (Ag-NPs) nanocomposite films. In this research, low-density polyethylene (LDPE) nanocomposite films were prepared containing Ag-NPs using maleic-anhydride-grafted low-density polyethylene (LDPE-g-MAH) as a compatibilizer by the melt mixing process. From mechanical property evaluation, it is revealed that the LDPE/LDPE-g-MAH/Ag-NPs nanocomposite films showed decreased tensile strength as compared with virgin LDPE matrix. Thermal characteristics of the prepared virgin LDPE and its nanocomposite films were studied by differential scanning calorimetry (DSC). Comprehensive analysis of different kinetic modelssuch as the Avrami and Mo model on non-isothermal crystallization kinetics was performed in order to correlate the rate of crystallization and its various kinetic parameters. Further, the macrokinetic equation as proposed by Malkinhas been applied to describe the kinetics of crystallization in the light of the Avrami equation. Concerning virgin LDPE and Ag-NP-reinforced LDPE, the former shows primary crystallization, whereas the later exhibits both primaryand secondary crystallization with varying Avrami exponents. Kinetic parameters are recognized, and confirm the influence of Ag-NPs on crystallization kinetics. X-ray diffraction spectroscopy and transmission electron microscopicanalysis of the nanocomposite films were conducted to verify the dispersion of inorganic filler particles in the resulting hybrids.

    • On the structural and electrical properties of metal–ferroelectric–high k dielectric–silicon structure for non-volatile memory applications

      PRASHANT SINGH RAJESH KUMAR JHA RAJAT KUMAR SINGH B R SINGH

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      In this article, we report the structural and electrical properties of metal–ferroelectric–high k dielectric–silicon (MFeIS) gate stack for non-volatile memory applications. Thin film of sputtered SrBi$_2$Nb$_2$O$_9$ (SBN) was used as ferroelectric material on 5–15 nm thick high-k dielectric (Al$_2$O$_3$) buffer layer deposited using plasma-enhanced atomic layer deposition (PEALD). The effect of annealing on structural and electrical properties of SBN and Al$_2$O$_3$ films was investigated in the temperature range of 350–1000$^{\circ}$C. X-ray diffraction results of the SBN and Al$_2$O$_3$ show multiple phase changes with an increase in the annealing temperature. Multiple angle ellipsometry data show the change in the refractive index ($n$) of SBNfilm from 2.0941 to 2.1804 for non-annealed to samples annealed at 600$^{\circ}C. For Al$_2$O$_3$ film, $n$ < 1.7 in the case of PEALDand $n$ > 1.7 for sputtered film was observed. The leakage current density in MFeIS structure was observed to two orders of magnitude lower than metal/ferroelectric/silicon (MFeS) structures. Capacitance–voltage (C–V) characteristics for the voltage sweep of $−$10 to 10 V in dual mode show the maximum memory window of 1.977 V in MFeS structure, 2.88 Vwith sputtered Al$_2$O$_3$ and 2.957 V with PEALD Al$_2$O$_3$ in the MFeIS structures at the annealing temperature of 500$^{\circ}$C.

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