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R Murlidharan
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Volume 21 Issue 4 August 1998 pp 313-316 Surfaces Of Materials
Lattice mismatch and surface morphology studies of In
x Ga1−x As epilayers grown on GaAs substratesR Pal M Singh R Murlidharan S K Agarwal D Pal D N Bose
In
x Ga1−x As (0·06≤x ≤0·35) epilayers were grown on GaAs substrates by atmospheric pressure metal organic chemical vapour deposition technique. Surface morphology and lattice mismatch in the InGaAs/GaAs films of different compositions were studied. Cross-hatched patterns were observed on the surface of the epilayers for bulk alloy composition up tox ≈0·25. Forx >0·3, a rough textured surface morphology was observed.
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Bulletin of Materials Science
Volume 46, 2023
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Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
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