Articles written in Bulletin of Materials Science

    • Interpretation of trap-assisted conduction with estimation of electrical parameters of thin indigo film-based semiconducting device


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      Trap-assisted charge conduction mechanism of indigo dye-based organic Schottky diode has been reported in present investigation. Signature of trapping probability has been encountered by G(I–V) vs. V characteristics. Nonmonotonous alignment of aforementioned characteristics emphasizes the existence of trapping states in its charge conduction process. Trap energy (E$_t$) has also been obtained for the device. Estimated value of E$_t$ is 0.073 eV which indicates improved outcome of 16.09 and 3.95%, when compared to other two previously reported organic dyes. Electrical parameters of the device have been estimated by analysing its $I–V$ relationship. Cheung–Cheung method has been used to calculate the series resistance (R$_s$), ideality factor ($n$) and barrier height ($\phi$) of the device. Obtained value of R$_s$, $n$ and $\phi$ are 0.127 k$\Omega$, 39.87 and 0.694 eV, respectively. Analysing the obtained data, Richardson–Schottky effect on charge transport mechanism has been interpreted in this context.

    • Impact of ZnO nanoparticles on electrical characteristics of herbal dye-based organic Schottky diode


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      The electrical parameters like barrier height (${\phi}$), series resistance ($R_s$), threshold voltage ($V_{th}$) and trap energy ($E_c$) of a herbal dye-based organic Schottky diode were investigated. Improvement in the outcome of the aforementioned parameters were investigated in the presence of zinc oxide (ZnO) nanoparticles. It has been observed that the preceding characteristics were likewise affected by ZnO nanoparticles. It has been calculated and shown that the incorporation of ZnO nanoparticles lowered the ${\phi}$ of Al/Beet/Cu from 0.75 to 0.73 eV based on I–V characteristics. Analysis of the outcome by using Norde function shows the barrier height reduction from 0.78 to 0.75 eV for the same experiment.Hence, the results produced using two above-mentioned methodologies are in good agreement together. The incorporation of ZnO nanoparticles reduces trap energy and series resistance by 36.98 and 23.81%, respectively, improving currentconduction in the bulk regime and lowering the Schottky diode’s threshold voltage ($V_{th}$) from 0.74 to 0.45 V. The impact of ZnO nanoparticles on a variety of natural dyes, such as turmeric and indigo, has also been studied. Validation of theresults for experimental dyes reveals a wider range of relevance for the current study.

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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