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R Dhanasekaran
Articles written in Bulletin of Materials Science
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Volume 7 Issue 5 December 1985 pp 411-417
Heterogeneous nucleation and growth of polycrystalline silicon
The heterogeneous nucleation theory of silicon on SiO2 and Si3N4 substrates has been developed using classical theory. It is shown that the experimental observations can be explained on the basis of the bond energies of O-H, N-H and Si-H. A reaction model is proposed for the growth of silicon on silicon from silane, using hydrogen as a carrier gas in the temperature region 600–900°C. The growth rate of silicon is shown to be equal to
P SiH4P H2 when the partial pressure of hydrogen is high, and is independent of the total pressure and the partial pressure of hydrogen in the lower region. -
Volume 13 Issue 1-2 March 1990 pp 43-49 First National Seminar On GaAs And III–V Compound Semiconductors
Electrodeposition kinetics of gallium arsenide
S Moorthy Babu L Durai R Dhanasekaran P Ramasamy
A kinetic model has been developed for the electrodeposition of GaAs from solution containing reducible ions of both constituents and is based on the generalised Butler-Volmer equation. The effect of hydrogen ion concentration and activities of ions on the total current density is studied. Voltammograms corresponding to various values of hydrogen ion concentration and activities of ions are constructed by the computer simulation technique.
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Bulletin of Materials Science
Volume 46, 2023
All articles
Continuous Article Publishing mode
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Bulletin of Materials Science | News
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Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020 -
Editorial Note on Continuous Article Publication
Posted on July 25, 2019Click here for Editorial Note on CAP Mode
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