• R Dhanasekaran

      Articles written in Bulletin of Materials Science

    • Heterogeneous nucleation and growth of polycrystalline silicon

      R Dhanasekaran P Ramasamy

      More Details Abstract Fulltext PDF

      The heterogeneous nucleation theory of silicon on SiO2 and Si3N4 substrates has been developed using classical theory. It is shown that the experimental observations can be explained on the basis of the bond energies of O-H, N-H and Si-H. A reaction model is proposed for the growth of silicon on silicon from silane, using hydrogen as a carrier gas in the temperature region 600–900°C. The growth rate of silicon is shown to be equal toPSiH4PH2 when the partial pressure of hydrogen is high, and is independent of the total pressure and the partial pressure of hydrogen in the lower region.

    • Electrodeposition kinetics of gallium arsenide

      S Moorthy Babu L Durai R Dhanasekaran P Ramasamy

      More Details Abstract Fulltext PDF

      A kinetic model has been developed for the electrodeposition of GaAs from solution containing reducible ions of both constituents and is based on the generalised Butler-Volmer equation. The effect of hydrogen ion concentration and activities of ions on the total current density is studied. Voltammograms corresponding to various values of hydrogen ion concentration and activities of ions are constructed by the computer simulation technique.

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    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

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      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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