A catalyst-free innovative synthesis, by combined X-ray chemical vapour deposition and lowtemperature thermal treatments, which has not been applied since so far to the growth of germanium nanowires (Ge-NWs), produced high yields of the nanoproducts with theGeH4 reactant gas. Nanowires were grown on both surfaces of a conventional deposition quartz substrate. They were featured with high purity and very large aspect ratios (ranging from 100 to 500). Products were characterized by scanning electron microscopy with energy-dispersiveatomic X-ray fluorescence and transmission electron microscopies, X-ray powder diffraction diffractometry, thermogravimetric analysis with differential scanning calorimetry, vibrational infrared and Raman and ultraviolet–visible–near infrared spectroscopies. A quantitative nanowire bundles formation was observed in the lower surface of the quartz substrate positioned over a heating support, whilst spots of nanoflowers constituted by Ge-NWs emerged from a bulk amorphous germanium film matter, deposited on the upper surface of the substrate. Thenanoproducts were characterized by crystalline core morphology, providing semiconductive features and optical band gap of about 0.67 eV. The possible interpretative base-growth mechanisms of the nanowires, stimulated bythe concomitant application of radiant and thermal conditions with no specific added metal catalyst, are hereafter investigated and presented.