• R Raman

      Articles written in Bulletin of Materials Science

    • Homogenization of zinc distribution in vertical Bridgman grown Cd0.96Zn0.04Te crystals

      J K Radhakrishnan B S Sunderseshu Meenakshi Srivastava G L Seth R Raman R C Narula R K Bagai

      More Details Abstract Fulltext PDF

      One of the most pressing issues in the growth of high quality single crystal Cd0.96Zn0.04Te material, is to achieve homogenization of the high axial variation of Zn concentration, caused by the larger than unity segregation coefficient of Zn in CdTe. This is achieved in our crystals

      by thermal annealing of the CdZnTe crystal, which redistributes the as grown Zn distribution by solid state diffusion of Zn (this solid state diffusion of Zn occurs at three stages

      during the growth when the solidified crystal is near to the melting point temperature,

      during the post growth annealing of the crystal at a high temperature and

      during the cooldown to room temperature) and

      by the reduction of Zn segregation during the growth stage by enhanced convective mixing of the melt, through a proper choice of ampoule and furnace dimensions.

      By adopting suitable growth parameters and sufficient post growth annealing it has been possible to grow Cd0.96Zn0.04Te crystals, which have nearly 75% of their fraction within 1% Zn concentration variation.

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