• R Pothiraj

      Articles written in Bulletin of Materials Science

    • Si diffusion in GaAs

      P Murugan R Pothiraj S D D Roy K Ramachandran

      More Details Abstract Fulltext PDF

      Theoretical studies are carried out to ascertain the dominant mechanism of Si diffusion in GaAs. Lattice dynamical model calculations have shown that the most probable diffusion mechanism is through a single vacancy even though several experiments cannot fix the mechanism as substitutional, substitutional–interstitial pair or neutral defect pair.

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