Articles written in Bulletin of Materials Science
Volume 25 Issue 4 August 2002 pp 335-340 Semiconductors
Theoretical studies are carried out to ascertain the dominant mechanism of Si diffusion in GaAs. Lattice dynamical model calculations have shown that the most probable diffusion mechanism is through a single vacancy even though several experiments cannot fix the mechanism as substitutional, substitutional–interstitial pair or neutral defect pair.
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