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R Mahapatra
Articles written in Bulletin of Materials Science
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Volume 25 Issue 6 November 2002 pp 455-457
ZrO2 as a high-𝜅 dielectric for strained SiGe MOS devices
R Mahapatra G S Kar C B Samantaray A Dhar D Bhattacharya S K Ray
The potential of ZrO2 thin film as a high-𝜅 gate dielectric for scaled MOSFET devices has been studied. ZrO2 has been deposited directly on a Si0.8Ge0.2 substrate by reactive RF magnetron sputtering. An equivalent oxide thickness of < 20 Å with a leakage current of the order of 10–4 A/cm2 at 1 V has been obtained. Well-behaved capacitance–voltage characteristics with an interface state density of 2 × 1011 cm–2eV–1 have been achieved. The deposited dielectric exhibits low charge trapping under constant current stressing.
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Bulletin of Materials Science
Volume 46, 2023
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Continuous Article Publishing mode
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Bulletin of Materials Science | News
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Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
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Posted on July 25, 2019Click here for Editorial Note on CAP Mode
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