R K Mangal
Articles written in Bulletin of Materials Science
Volume 29 Issue 7 December 2006 pp 653-657 Semiconductors
Al–Sb bilayer thin films having various thicknesses were deposited by thermal evaporation on ITO-coated conducting glass substrates at a pressure of 10-5 torr. These films were irradiated by Ag12+ heavy ions of energy, 160 MeV, with a fluence of 2.2 × 1013 ions/cm2, to get aluminum antimonide semiconductor. Rutherford back scattering and optical band gap data confirmed mixing of bilayer to form the semi-conducting system.
Volume 30 Issue 1 February 2007 pp 5-7 Thin Films
In this paper, we present preparation and characterization of Al–Sb bilayer thin films. Thin films of thicknesses, 3000/1000 Å and 3000/1500 Å, were obtained by the thermal evaporation (resistive heating) method. Vacuum annealing and rapid thermal annealing methods were used to mix bilayer thin film structure. Results obtained from optical band gap data and Rutherford back scattering spectrometry showed mixing of Al–Sb bilayer system.
Volume 30 Issue 2 April 2007 pp 117-121 Thin Films
The thin films of In–Sb having different thicknesses of antimony keeping constant thickness of indium was deposited by thermal evaporation method on ITO coated conducting glass substrates at room temperature and a pressure of 10-5 torr. The samples were annealed for 1 h at 433 K at a pressure of 10-5 torr. The optical transmission spectra of as deposited and annealed films have been carried out at room temperature. The variation in optical band gap with thickness was also observed. Rutherford back scattering and X-ray diffraction analysis confirms mixing of bilayer system. The transverse 𝐼–𝑉 characteristic shows mixing effect after annealing at 433 K for 1 h. This study confirms mixing of bilayer structure of semiconductor thin films.
Volume 42 | Issue 6
Click here for Editorial Note on CAP Mode