• R K Mangal

      Articles written in Bulletin of Materials Science

    • Preparation of Al–Sb semiconductor by swift heavy ion irradiation

      R K Mangal M Singh Y K Vijay D K Avasthi

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      Al–Sb bilayer thin films having various thicknesses were deposited by thermal evaporation on ITO-coated conducting glass substrates at a pressure of 10-5 torr. These films were irradiated by Ag12+ heavy ions of energy, 160 MeV, with a fluence of 2.2 × 1013 ions/cm2, to get aluminum antimonide semiconductor. Rutherford back scattering and optical band gap data confirmed mixing of bilayer to form the semi-conducting system.

    • Study of annealing effects in Al–Sb bilayer thin films

      R K Mangal B Tripathi M Singh Y K Vijay

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      In this paper, we present preparation and characterization of Al–Sb bilayer thin films. Thin films of thicknesses, 3000/1000 Å and 3000/1500 Å, were obtained by the thermal evaporation (resistive heating) method. Vacuum annealing and rapid thermal annealing methods were used to mix bilayer thin film structure. Results obtained from optical band gap data and Rutherford back scattering spectrometry showed mixing of Al–Sb bilayer system.

    • Study of annealing effects in In–Sb bilayer thin films

      R K Mangal Y K Vijay

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      The thin films of In–Sb having different thicknesses of antimony keeping constant thickness of indium was deposited by thermal evaporation method on ITO coated conducting glass substrates at room temperature and a pressure of 10-5 torr. The samples were annealed for 1 h at 433 K at a pressure of 10-5 torr. The optical transmission spectra of as deposited and annealed films have been carried out at room temperature. The variation in optical band gap with thickness was also observed. Rutherford back scattering and X-ray diffraction analysis confirms mixing of bilayer system. The transverse 𝐼–𝑉 characteristic shows mixing effect after annealing at 433 K for 1 h. This study confirms mixing of bilayer structure of semiconductor thin films.

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