• R H Bari

      Articles written in Bulletin of Materials Science

    • Structural, optical and electrical properties of chemically deposited nonstoichiometric copper indium diselenide films

      R H Bari L A Patil P P Patil

      More Details Abstract Fulltext PDF

      Thin films of copper indium diselenide (CIS) were prepared by chemical bath deposition technique onto glass substrate at temperature, 60°C. The studies on composition, morphology, optical absorption, electrical conductivity and structure of the films were carried out and discussed. Characterization included X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDAX) and absorption spectroscopy. The results are discussed and interpreted.

    • Electrical properties of chemically prepared nonstoichiometric CuIn(S,Se)2 thin films

      R H Bari L A Patil A Soni G S Okram

      More Details Abstract Fulltext PDF

      Polycrystalline thin films of copper indium sulphoselenide [CuIn(S,Se)2] were deposited on glass substrate by chemical bath deposition technique. The deposition parameters such as pH, temperature and time were optimized. A set of films having different elemental compositions was prepared by varying Cu/In ratio from 1.87–12.15. The films were characterized by X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDAX). The chemical composition of the CuIn(S,Se)2 was found to be nonstoichiometric. The d.c. conductivities of the films were studied below and near room temperature. The thermo-electric power of the films was also measured and type of semiconductivity was ascertained.

    • Structural, optical and electrical properties of chemically deposited copper selenide films

      R H Bari V Ganesan S Potadar L A Patil

      More Details Abstract Fulltext PDF

      Stoichiometric and nonstoichiometric thin films of copper selenide have been prepared by chemical bath deposition technique at temperature below 60°C on glass substrate. The effect of nonstoichiometry on the optical, electrical and structural properties of the film was studied. The bandgap energy was observed to increase with the increase in at % of copper in composition. The grain size was also observed to increase with the decrease of at % of copper in composition. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDS), absorption spectroscopy, and AFM. The results are discussed and interpreted.

    • Preparation and characterization of nanostructured copper bismuth diselenide thin films from a chemical route

      R H Bari L A Patil

      More Details Abstract Fulltext PDF

      Thin films of copper bismuth diselenide were prepared by chemical bath deposition technique onto glass substrate below 60°C. The deposition parameters such as time, temperature of deposition and pH of the solution, were optimized. The set of films having different elemental compositions was prepared by varying Cu/Bi ratio from 0.13–1.74. Studies on structure, composition, morphology, optical absorption and electrical conductivity of the films were carried out and discussed. Characterization includes X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDAX), absorption spectroscopy, and electrical conductivity. The results are discussed and interpreted.

  • Bulletin of Materials Science | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.