• QISONG CHEN

Articles written in Bulletin of Materials Science

• Effects of Zn doping concentration on resistive switching characteristics in Ag/La$_{1−x}Zn$_x$MnO$_3$/p$^+$-Si devices Ag/La$_{1−x}$Zn$_x$MnO$_3$/p$^+$-Si devices with different Zn doping contents were fabricated through sol–gel method. The effects of Zn doping concentration on the microstructure of La$_{1−x}$Zn$_x$MnO$_3$films, as well as on the resistance switching behaviour and endurance characteristics of Ag/La$_{1−x}$Zn$_x$MnO$_3$/p$^{+}$-Si were investigated. After annealing at 600$^{\circ}$C for 1~h, the La$_{1−x}$Zn$_x$MnO$_3$($x = 0.1$, 0.2, 0.3, 0.4, 0.5) are amorphous and have bipolar resistance characteristics, with RHRS/RLRS ratios$>$103. However, the endurance characteristics show considerable differences;$x = 0.3$shows the best endurance characteristics in more than 1000 switching cycles. The conduction mechanism of the Ag/La$_{1−x}$Zn$_x$MnO$_3$/p$^{+}$-Si is the Schottky emission mode at high resistance state. However, the conduction mechanism at low resistance state varies with Zn doping concentration. The dominant mechanism at$x = 0.1$is filamentary conduction mechanism, whereas that at$x \ge 0.2$is space-charge-limited current conduction. • Bipolar resistive switching behaviour in Mn$_{0.03}$Zn$_{0.97}$O/amorphous La$_{0.7}$Zn$_{0.3}$MnO$_3$heterostructure films Mn$_{0.03}$Zn$_{0.97}$O (MZO)/amorphous La$_{0.7}Zn$_{0.3}$MnO$_3$ (LZMO) heterostructures were deposited on p$^+$-Si substratesthrough sol–gel spin coating. Ag/MZO/LZMO/p$^+$-Si and Ag/LZMO/MZO/p$^+$-Si devices exhibit a bipolar, reversibleand remarkable resistive switching behaviour at room temperature. The ratio of the resistance at high-resistance state (HRS)to that at low-resistance state (LRS) ($R_{\rm HRS}/R_{\rm LRS}$) in the Ag/LZMO/MZO/p$^+$-Si device is approximately five orders of magnitude, and is maintained after over 10$^3$ successive switching cycles or over a period of $2\times 10^6$ s, indicating good endurance property and retention characteristics. Conversely, the ratio in the Ag/MZO/LZMO/p$^+$-Si device began to decrease after 100 successive switching cycles. The LZMO/MZO interface could play an important role in the resistive switching behaviour of the devices. The dominant conduction mechanism of the two devices is charge-trap emission.

• # Bulletin of Materials Science

Volume 45, 2022
All articles
Continuous Article Publishing mode

• # Dr Shanti Swarup Bhatnagar for Science and Technology

Posted on October 12, 2020

Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020