• P S Nikam

      Articles written in Bulletin of Materials Science

    • Composition dependence of electrical properties of simultaneously evaporated Sb-Se thin films

      P S Nikam R R Pawar

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      Amorphous thin films of Sb-Se are prepared using the three-temperature method. The films are prepared with atomic compositions from 5–90 at.% Sb. The electrical resistivity, Hall voltage and thermoelectric power of annealed samples have been measured in the temperature range 25 to 250°C. On heat treatment the sharp fall of resistance of the annealed films is attributed to radical structural transformation from amorphous to crystalline. Electrical resistivity, Hall constant and thermoelectric power are found to vary with thickness and composition of the film.

    • Conduction mechanism in codeposited AgSe thin films

      P S Nikam H S Aher

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      Thin films of AgSe of varying compositions and thicknesses have been formed on glass substrates employing the three-temperature method.I–V characteristics and thermoelectric power, α, of annealed samples have been measured as functions of composition, thickness and temperature of the films. Films exhibitn-type conductivity. Nonohmic conduction in films of AgxSe1−x(0<x<0·5) and AgxSe1−x(0>x>0·5) have been accounted for on the basis of the theory of Rose of defect insulator containing shallow traps and on Schottky emission respectively.

    • Dielectric properties of Fe(OH)3 thin films formed at solution-gas interface

      P S Nikam K A Pathan

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      Dielectric properties of solution-gas interface-formed Fe(OH)3 thin-film capacitors (Al/Fe(OH)3/Al) of various thicknesses have been studied in the frequency range 10–106 Hz at various temperatures (300–443 K). Dielectric constant, ε, increases with increasing film thickness (d) and temperature (T) and decreases with increase of frequency (f). The loss factor (tan δ), showing pronounced minimum with frequency, increases with rise of temperature, and tan δmin shifts to a higher frequency. The large increase in dielectric constant towards low frequency region indicates the possibility of an interfacial polarization mechanism in this region.

    • Composition dependence of electrical properties of Al-Sb thin films

      P S Nikam R Y Borse R R Pawar

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      Thin films of Al-Sb of varying compositions and thickness have been formed on glass substrates employing three-temperature method. Electrical resistivity (ρ) and activation energy (ΔE) have been studied as a function of composition, thickness (d) and temperature of the film. Films of Al-Sb system with aluminium < 50 at.%, ∼ 50 at.% and > 50 at.% exhibit metallic, semiconducting and metallic to semiconducting behaviours respectively. Activation energy (ΔE) of semiconducting films found to vary inversely with thickness, is attributed to combined effects of change in barrier height due to the size of grains and stoichiometry in the films.

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