P S Nikam
Articles written in Bulletin of Materials Science
Volume 13 Issue 5 December 1990 pp 343-350
Amorphous thin films of Sb-Se are prepared using the three-temperature method. The films are prepared with atomic compositions from 5–90 at.% Sb. The electrical resistivity, Hall voltage and thermoelectric power of annealed samples have been measured in the temperature range 25 to 250°C. On heat treatment the sharp fall of resistance of the annealed films is attributed to radical structural transformation from amorphous to crystalline. Electrical resistivity, Hall constant and thermoelectric power are found to vary with thickness and composition of the film.
Volume 17 Issue 1 February 1994 pp 41-50
Thin films of AgSe of varying compositions and thicknesses have been formed on glass substrates employing the three-temperature method.
Volume 17 Issue 5 October 1994 pp 493-498
Dielectric properties of solution-gas interface-formed Fe(OH)3 thin-film capacitors (Al/Fe(OH)3/Al) of various thicknesses have been studied in the frequency range 10–106 Hz at various temperatures (300–443 K). Dielectric constant, ε, increases with increasing film thickness (
Volume 20 Issue 7 October 1997 pp 1015-1021
Thin films of Al-Sb of varying compositions and thickness have been formed on glass substrates employing three-temperature method. Electrical resistivity (
Volume 42 | Issue 6
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