• P R Apte

      Articles written in Bulletin of Materials Science

    • Transistors made in laser recrystallized polysilicon on insulator films

      S Chandrasekhar P R Apte S K Roy

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      lpcvd polycrystalline silicon films were deposited on thermally oxidized silicon as well as onlpcvd silicon nitride deposited on silicon. Acw argon ion laser was used to recrystallize the polysilicon film into large grains (grain size from 5µm to 40µm). Boron was then implanted and standard N-channel silicon gate process and N-channel metal gate process were carried out to realisemosfets on this material. Channel mobilities upto 450 cm2/V-sec for electrons have been measured. This thin filmmosfet has a four-terminal structure with a top and a bottom gate and the influence of one gate on the drain current due to the other gate has been investigated. Comparison of theIDv-VD curves of the devices with physical models was found in good agreement.

    • Oxygen incorporation duringin situ growth of YBCO films on both sides of substrates

      S P Pai R Pinto P R Apte C P D’Souza A G Chourey D Kumar

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      Oxygen out-diffusion during cooling and heating ofin situ grown {ie685-1} (YBCO) films in low oxygen pressure used during growth by pulsed laser deposition was studied in the temperature range 700−450°C usingin situ resistance measurements. Results indicate that irrespective of the number of cooling and heating cycles seen by the films, full oxygenation of the films can be realized by the final cooling from the growth temperature in 500 torr oxygen pressure. This result has been successfully used to sequentially grow high quality YBCO films on both sides of LaAlO3 substrates. These films have been used for the fabrication of X-band microstrip resonators with superconducting ground plane.

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