• P P Puri

      Articles written in Bulletin of Materials Science

    • Some new results in porous silicon

      V K Jain Amita Gupta C R Jalwania Adarsh Kumar G K Singhal O P Arora D S Ahuja P P Puri R Singh M Pal

      More Details Abstract Fulltext PDF

      Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography has been suggested to obtain porous silicon in selected areas. Etch stop method to control the thickness of the porous layer and an organic protective layer for porous silicon have also been suggested. Models proposed by other workers to explain luminescence in porous silicon are not sufficient to explain many experimental observations. A hybrid model is suggested.

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