P K Basu
Articles written in Bulletin of Materials Science
Volume 1 Issue 1 May 1979 pp 63-66 Research Communications
Volume 7 Issue 2 July 1985 pp 149-154
Auger recombination is the dominant non-radiative process in InGaAsP quantum well lasers and is responsible for the poor temperature dependence of the threshold current density. In all recent calculations of the Auger rate the electron-electron interaction potential is taken to be either of the bulk form or an approximate form derived from it. In the present work, the rate is calculated by taking an appropriate potential valid for quasi two-dimensional electrons and the expected changes are pointed out. The calculated Auger life-time is in agreement with the values reported in the literature.
Volume 13 Issue 1-2 March 1990 pp 65-74 First National Seminar On GaAs And III–V Compound Semiconductors
Conditions for the formation of low-dimensional electron gas in semiconductors and different structures supporting it are discussed. Some of the new devices in which carriers have low-dimensional motion are introduced. The properties of electrons needed to be studied for the optimisation of the device performance are mentioned. In particular, the charge control and mobility of electrons in high electron mobility transistors, gain and loss processes in quantum well lasers, and excitonic line width in multiple quantum wells are discussed.
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