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    • PENCHALAIAH PALLA

      Articles written in Bulletin of Materials Science

    • Volume 39 Issue 6 October 2016 pp 1441-1451

      Bandgap engineered graphene and hexagonal boron nitride for resonant tunnelling diode

      PENCHALAIAH PALLA GOPI RAJA UPPU ANITA S ETHIRAJ J P RAINA

      More Details Abstract Fulltext PDF

      In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green’s function formalism on an effective mass-Hamiltonian. Both p- and n-type DBRTDs exhibit a negative differential resistance effect, which entails the resonant tunnelling through the hole and electron bound states in the graphene quantum well, respectively. The peak-to-valley ratio of approximately 8 (3) for p-type (n-type) DBRTD with quantum well of 5.1 nm (4.3 nm) at a barrier width of 1.3 nm was achieved for zero bandgap graphene at room temperature.

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    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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