InGaAs/InP quantum wells of widths varying from 19 Å to 150 Å have been grown by MOVPE and the growth temperature optimized using photoluminescence and SIMS. It was thus found that for a 78 Å well the lowest PL linewidth of 12.7 meV at 12 K was obtained for growth at 625°C. SIMS also showed sharpest interfaces for this temperature compared with growth at 610°C and 640°C. The well widths determined from PL energies were in good agreement with a growth rate of 8.25 Å/s. However, while the barrier widths of 150 Å were in agreement with SIMS results, the well widths from SIMS were found to be much larger, due to a lower sputtering rate of InGaAs compared with InP. Quantitative comparison was made assuming the presence of InAsP and InGaAsP interface layers on either side of the wells and the relative sputtering rates determined.

In this work, we have deposited poly(aniline-co-𝑚-aminobenzoic acid) on poly(vinyl alcohol) (PVA) by in situ polymerization. The polymerization was effected within maleic acid (MA) cross-linked PVA hydrogel. The copolymer was obtained by oxidative polymerization of aniline hydrochloride and 𝑚-aminobenzoic acid using ammonium persulfate as an oxidant. Instead of conventional solution polymerization, here synthesis was carried out on APS soaked MA cross-linked PVA (MA–PVA) film where the polymer was in situ deposited in its conducting form. The composite film was characterized by Fourier transform infra red (FT–IR) and ultraviolet visible (UV–VIS) spectroscopy and electrical measurements. Surface morphology of the composite films was studied by field emission scanning electron microscopy (FESEM). The variation of conductivity of the films was studied.