In this article, the fabrication and characterization of transparent metal-insulator-semiconductor (MIS)capacitors on plastic substrates are presented. Zinc oxide and indium tin oxide films were used as semiconductor layer and electrode, respectively. The thin films were deposited by a home-made high-frequency ultrasonic spray pyrolysis deposition system. Polyethylene terephthalate is used as plastic substrate. The maximum temperature of the process was 200$^{\circ}$C. The MIS capacitors exhibit above 70% of transparency and operate at ±1 V. Therefore, the transparent devices are compatible with low-power electronics. Moreover, the thin films were characterized by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscope and Raman spectroscopy.

In this study, iron phthalocyanine (FePc) thin films were obtained by spin-coating at 80°C and used as the active layer in organic thin-film transistors (OTFTs). The OTFTs have an inverted coplanar structure and were fabricatedon plastic substrates made of polyethylene terephthalate. Silicon oxide spin-on glass was used as gate dielectric. The FePc thin films were characterized by UV-Vis spectroscopy, Raman spectroscopy and current–voltage measurements. Interestingly, the electrical characteristics of the FePc OTFTs exhibited a depletion-type behaviour. The threshold voltage extracted was -1.18 V, the subthreshold slope was 0.1 V per decade and the field-effect mobility was 0.002 cm$^2$ Vs$^{-1}$. As far as we know, this is the first report of FePc-based OTFTs on plastic substrates.