N Kishan Reddy
Articles written in Bulletin of Materials Science
Volume 12 Issue 2 July 1989 pp 95-99
The effect of infiltrants on the electrical resistivity of reaction-sintered silicon carbide, at temperatures ranging from RT to 1000°C, has been studied. Electrical resistivity decreases with increase in temperature up to 1000°C in VC and MoSi2, whereas minimum electrical resistivity is observed at ∼600°C in B4C infiltrant.
Volume 13 Issue 3 June 1990 pp 173-178
Silicon nitride-silicon carbide (Si3N4-SiC) composites were prepared by varying the percentage of silicon nitride at temperatures of 1350 to 1450°C. The mechanical and thermal properties of these composites were determined. The modulus of rupture of the composites increases with increase of temperature whereas the thermal expansion decreases. Composites with 10% and 50% Si3N4 have modulus of rupture of 49 and 86 MPa at 1400°C and thermal expansion coefficients (25°–1000°C) of 4·4 × 10−6 and 3·2 × 10−6°C−1 respectively.
Volume 42 | Issue 6
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