The deposition of yttria-stabilized zirconia (YSZ) as buffer layer on (100) silicon has been studied by rf sputtering with a view to subsequently preparing superconducting films of YBa2Cu3Ox on it. As-deposited films were found to be (100) oriented. The thermal mismatch and reaction between Si and YSZ at high temperatures were found to give rise to cracks in the films. Grain growth of buffer layer on annealing helped in the formation of superconducting phase.
