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    • N Benrekaa

      Articles written in Bulletin of Materials Science

    • Volume 34 Issue 7 December 2011 pp 1689-1692

      Improvement of multicrystalline silicon wafer solar cells by post-fabrication wet-chemical etching in phosphoric acid

      A Mefoued M Fathi J Bhatt A Messaoud B Palahouane N Benrekaa

      More Details Abstract Fulltext PDF

      In this study, we have improved electrical characteristics such as the efficiency (𝜂) and the fill factor (FF) of finished multicrystalline silicon (𝑚𝑐-Si) solar cells by using a new chemical treatment with a hot phosphoric (H3PO4) acidic solution. These 𝑚𝑐-Si solar cells were made by a standard industrial process with screen-printed contacts and a silicon nitride (SiN) antireflection coating. We have deposited SiN thin layer (80 nm) on 𝑝-type 𝑚𝑐-Si substrate by the mean of plasma enhanced chemical vapour deposition (PECVD) technique. The reactive gases used as precursors inside PECVD chamber are a mixture of silane (SiH4) and ammonia (NH3) at a temperature of 380°C. The developed H3PO4 chemical surface treatment has improved 𝜂 from 5.4 to 7.7% and FF from 50.4 to 70.8%, this means a relative increase of up to 40% from the initial values of 𝜂 and FF. In order to explain these improvements, physical (AFM, EDX), chemical (FTIR) and optical (spectrophotometer) analyses were done.

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