The temperature-dependent PL properties of GaN-rich In_𝑥Ga_1−𝑥N alloys is investigated and 𝑆-shaped temperature dependence is observed in all InGaN samples. It is found that the origin of localization effect in samples A and B are different from that in sample C. For samples A and B, In content fluctuations should be the origin of localization effect, while the localization effect can be attributed to In-rich clusters and metallic indium inclusions for sample C. In addition, the band-tail model is modified and the modified band-tail model is used to investigate the degree of localization effect in the three samples.

Nickel nanowires were synthesized via a template-free method in an aqueous solution system combined with chemical reduction and magnetic field. The suitable concentration of Ni ions and reaction time were controlled in order to obtain nickel wires with uniform sizes. The products were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, thermogravimetry and differential scanning calorimetry. The results showed that the Ni nanowires with large aspect ratio up to 200 had uniform size and morphology, about 200 nm. Especially, it is noteworthy that the samples were stable in air when the temperature was lower than 318°C. The study would provide a facile method to prepare nickel nanowires with homogeneous diameter and high thermal stability, which could be used in catalysing CO₂ hydrogenation.