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    • Volume 13 Issue 1-2 March 1990 pp 33-36 First National Seminar On GaAs And III–V Compound Semiconductors

      An investigation of the growth of In0·53Ga0·47As layers on InP by liquid phase epitaxy

      S Dhar Mala Mitra J B Roy B R Nag

      More Details Abstract Fulltext PDF

      Liquid phase epitaxial growth of lattice-matched In0·53Ga0·47As layers on InP substrates is investigated with particular emphasis on the role of interface defects on layer quality. By differential Hall measurements it is established that a bad interface, resulting from the thermal decomposition of InP substrate prior to growth, degrade the electron mobility in all parts of the layer and the effect is most pronounced at regions close to the interface. However layers with much better physical and electrical characteristics are grown following steps to ensure substrate surfaces free from any thermal damage.

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      Posted on July 25, 2019

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