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Volume 45 All articles Published: 19 May 2022 Article ID 0089
Formation of superhydrophobic porous GaAs layer: effect of substrate doping type
In this report, the effect of the GaAs substrate type on the surface hydrophobicity of porous GaAs layers produced by an electrochemical etching method is investigated. At an etching time of 60 min, the porous GaAs layer formed on
p $^+$-type GaAs substrate shows a hydrophobic surface with advancing water contact angle (${\varTheta}_a$) of around 140°, and a wetting hysteresis of ${\sim}$17.5°. Under the same equivalent etching conditions and parameters, the layer formed onn $^+$-type GaAs substrate exhibits self-cleaning superhydrophobic surface with advancing ${\varTheta}_a$) ${\approx}$ 158°, and a wetting hysteresis of ${\sim}$2.4°. This is attributed to doping type-induced morphological and structural modifications of porous GaAs layer, as it is inferred from scanning electron microscopy, atomic force microscopy, Raman scattering and X-ray photoelectron spectroscopy results and analysis. The layer formed onn $^+$-type substrate shows a ${\beta}$-Ga$_2$O$_3$-rich surface of micrometre-sized cone-like textures composed of bunched nano-wires, whereas the layer formed onp $^+$-type substrate exhibits an As$_2$O$_3$-rich micron-sized grooved structure. Superhydrophobic porous GaAs is of interest for prospective photovoltaic and sensing applications.
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Bulletin of Materials Science
Volume 46, 2023
All articles
Continuous Article Publishing mode
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Bulletin of Materials Science | News
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Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020 -
Editorial Note on Continuous Article Publication
Posted on July 25, 2019Click here for Editorial Note on CAP Mode
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