M K Agarwal
Articles written in Bulletin of Materials Science
Volume 1 Issue 2 October 1979 pp 107-112 Research Communications
Single crystals of tantalum disulphide have been grown by a sublimation or direct vapour transport method. Crystals as large as 15×10×0·05 mm3 grew in the form of platelets and needles above the charge which was kept well distributed within the ampoule. Characterisation of the as-grown crystals has been carried out at room temperature by x-ray diffraction. Electrical conductivity and magnetic susceptibility measurements have also been made.
Volume 2 Issue 2 May 1980 pp 145-150 Communications
A realistic estimation of growth and deformation fault probability has been made in the crystals of WSe2 grown by a direct vapour transport method. Electron microscopy of the specimens revealed the presence of two-fold ribbons from which the
Volume 2 Issue 4 November 1980 pp 283-286
The optical constants
Volume 3 Issue 4 December 1981 pp 389-397
TEM studies of tungstenite crystals grown by sublimation method have been investigated. Different types of dislocation network patterns were observed. The observed network patterns in bright field are compared with weak beam dark field pictures and the results are discussed.
Volume 4 Issue 4 July 1982 pp 467-471 Articles
Single crystal solid solutions in the series Mo
Volume 6 Issue 3 July 1984 pp 549-567
Besides interesting properties such as optical, transport, structure, etc. possessed by crystals of transition metal dichalcogenides, they have also been found to have a potential application in the fabrication of
The crystals thus grown have been characterized structurally using the techniques of x-ray powder, rotation and Weissenberg photographs and electron diffraction. Perfection studies have been made by techniques like chemical etching and electron microscopy.
This review describes the electron microscopic studies made on the single crystals of the layered compounds. High resolution technique of weak beam has been employed to study dislocation pattern. Dissociated dislocations have been used to estimate stacking fault energy. Such measurements have also been carried out at different temperatures and the variation of stacking fault energy with temperature has been worked out. Interesting information regarding phase transformation for TaS2 and W3Se4 in the temperature range 109 to 580 K has been derived from the electron diffraction studies and the implications have been discussed.
Volume 9 Issue 5 December 1987 pp 337-341
The layer type MoSe
Volume 12 Issue 2 July 1989 pp 163-169
Recent reports on highly efficient photoelectrochemical solar cells with
Volume 21 Issue 3 June 1998 pp 213-217
Single crystals of zirconium diselenide (ZrSe2) were grown by chemical vapour transport method using iodine as the transporting agent. The crystals were found to exhibit metallic behaviour in the temperature range 77–300 K and semiconducting nature in 300–443 K range. The measurements of thermoelectric power and conductivity enabled the determination of both carrier mobility and carrier concentration. The variation of carrier mobility and carrier concentration with temperature indicates the presence of deep trapping centres and their reduction with temperature in these crystals.
Volume 21 Issue 4 August 1998 pp 291-295 Nucleation And Growth Studies
Single phase copper indium disulphide (CuInS2) thin films of thickness between 60 nm and 650 nm with the chalcopyrite structure are obtained on NaCl and glass substrates by flash evaporation. The films were found to be
Volume 21 Issue 4 August 1998 pp 297-301 Nucleation And Growth Studies
Large single crystals of a few important members (
Volume 42 | Issue 6
Click here for Editorial Note on CAP Mode