• MD SHERAJUL ISLAM

      Articles written in Bulletin of Materials Science

    • Deconvolution of Raman spectra of disordered monolayer graphene: an approach to probe the phonon modes

      Md SHERAJUL ISLAM KHALID N ANINDYA A G BHUIYAN A HASHIMOTO

      More Details Abstract Fulltext PDF

      This paper explores the phonon modes from the Raman spectrum of disordered monolayer epitaxial graphene using the deconvolution technique.The phonon density of states (PDOS) of pristine monolayer graphene has been enumerated and convoluted by a Gaussian function to check the accuracy of the deconvolution process.We show that the original PDOS is recovered by deconvolution of the convoluted spectrum with the same spread function.We propose that the PDOS of pristine monolayer graphene is similar to that of the relative intensity of the deconvoluted Raman spectrum of disordered epitaxialgraphene. These results could be used for identifying the intensity of individual phonon modes to justify the structure, and probing the mechanism of changing the phonon modes with various types of defects formed in graphene.

    • Behaviour of Raman B$_1$ (high) mode and evaluation of crystalline quality in the In$_x$Ga$_{1–x}$N alloys grown by RF-MBE

      ASHRAFUL G BHUIYAN KENJI KURODA MD SHERAJUL ISLAM AKIHIRO HASHIMOTO

      More Details Abstract Fulltext PDF

      In$_x$Ga$_{1–x}$N ternary alloys are very promising for a variety of applications. However, high-quality growth of In$_x$Ga$_{1–x}$N alloys, particularly in the intermediate In composition range, is very difficult. This study reports on a systematic analysis of the Raman spectra from the In$_x$Ga$_{1–x}$N alloys grown by radio-frequency molecular beam epitaxy (RF-MBE)for the whole In compositional range, particularly in the intermediate range of In composition. The B$_1$ (high) mode, which is inherently Raman inactive is observed for the In$_x$Ga$_{1–x}$N alloys grown by RF-MBE. The behaviour of Raman inactive B$_1$ (high) mode is studied for the evaluation of In$_x$Ga$_{1–x}$N quality, which is found to vary with the In composition and thetemperature of growth. The crystallinity of the In$_x$Ga$_{1–x}$N alloys can be assessed using B$_1$ (high) mode’s relative signal intensity and full-width at half-maximum, which are well agreed with the reflection high energy electron diffraction and X-ray diffraction analyses. The optimum growth temperature for the In$_x$Ga$_{1–x}$N alloys grown by RF-MBE in the intermediate range of In composition is also discussed.

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.