• M Sudharshan

      Articles written in Bulletin of Materials Science

    • Optical, electrical and thermoelectric power studies of Al–Sb thin film bilayer structure

      M Singh J S Arora Y K Vijay M Sudharshan

      More Details Abstract Fulltext PDF

      The III–V semiconductors are of great importance due to their applications in various electro-optic devices. The Al–Sb thin film was deposited on glass substrate by thermal evaporation method at a pressure of 10-5 torr. The samples were annealed for 3 h at different constant temperatures in a vacuum chamber at a pressure of 10-5 torr. The electrical resistance vs temperature studies show phase transformation from metallic to semiconducting. The observed positive thermoelectric power indicates that Al–Sb thin films are 𝑝-type in nature. The Rutherford back scattering analysis and optical band gap measurements also indicate that the interdiffusion concentration varies with temperature.

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