• M Jayachandran

      Articles written in Bulletin of Materials Science

    • Structural and optical properties of electron beam evaporated CdSe thin films

      N J Suthan Kissinger M Jayachandran K Perumal C Sanjeevi Raja

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      Thin films of cadmium selenide (CdSe) as a semiconductor is well suited for opto-electronic applications such as photo detection or solar energy conversion, due to its optical and electrical properties, as well as its good chemical and mechanical stability. In order to explore the possibility of using this in optoelectronics, a preliminary and thorough study of optical and structural properties of the host material is an important step. Based on the above view, the structural and optical properties of CdSe films have been studied thoroughly in the present work. The host material, CdSe film, has been prepared by the physical vapour deposition method of electron beam evaporation (PVD: EBE) technique under a pressure of 5 × 10-5 mbar. The structural properties have been studied by XRD technique. The hexagonal structure with a preferred orientation along the (0 0 2) direction of films has been confirmed by the X-ray diffraction analysis. The films have been analysed for optical band gap and absorbed a direct intrinsic band gap of 1.92 eV.

    • Influence of nitrogen flow rates on materials properties of CrN𝑥 films grown by reactive magnetron sputtering

      B Subramanian K Prabakaran M Jayachandran

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      Chromium nitride (CrN) hard thin films were deposited on different substrates by reactive direct current (d.c.) magnetron sputtering with different nitrogen flow rates. The X-ray diffraction patterns showed mixed Cr2N and CrN phases. The variations in structural parameters are discussed. The grain size increased with increasing nitrogen flow rates. Scanning electron microscopy image showed columnar and dense microstructure with varying nitrogen flow rates. An elemental analysis of the samples was realized by means of energy dispersive spectroscopy. The electrical studies indicated the semiconducting behaviour of the films at the nitrogen flow rate of 15 sccm.

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