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    • Volume 13 Issue 1-2 March 1990 pp 43-49 First National Seminar On GaAs And III–V Compound Semiconductors

      Electrodeposition kinetics of gallium arsenide

      S Moorthy Babu L Durai R Dhanasekaran P Ramasamy

      More Details Abstract Fulltext PDF

      A kinetic model has been developed for the electrodeposition of GaAs from solution containing reducible ions of both constituents and is based on the generalised Butler-Volmer equation. The effect of hydrogen ion concentration and activities of ions on the total current density is studied. Voltammograms corresponding to various values of hydrogen ion concentration and activities of ions are constructed by the computer simulation technique.

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      Posted on July 25, 2019

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