In this study, it was found that infrared-assisted annealing (IAA) was a novel and rapid method for growing of high-qualitied MAPbI$_3$ films. Compared to traditional thermal annealing, this new strategy combined high-intensity infrared photon flux into annealing process, which achieved the high-qualitied MAPbI$_3$ film with large crystalline grains and less surface defects. The reaction between MAI and PbI2 was characterized by confocal laser scanning and X-ray diffraction, which showed the addition of the infrared photons accelerated the reaction of the crystal, and the growth process of perovskite films with the increase of photon number is revealed. The simulation results revealed that infrared photons reduced the critical-free energy of crystallization of MAI and PbI$_2$, leading to the rapid growth of grains. Fabricated perovskite devices based on MAPbI$_3$ film obtained by this strategy produced optimized power conversion efficiency over 17% under only 5 min of IAA treatment, which increased by 2.6% compared to the thermal annealing. The efficiency improvement mainly attributed to better crystallinity, larger crystal grains under the IAA treatment, which had provided a new strategy for the future industrial production of perovskites.

Potential-induced degradation (PID) is recently recognized as one of the most important degradation mechanisms in crystalline silicon cells as well as in photovoltaic (PV) modules. The ability of solar cells to resist PID effect is one of the key indicators of product quality monitoring. Traditional PID testing methods are complex and require up to 96 h in treating. To accelerate the PID test, a rapid PID treatment technology was urgent for PV field, which can extremely decrease the time expense. Hence, we have introduced a novel rapid PID treating technology, which reduced the treatment time from nearly 100 h to less than 8 h. This technology was applying an electric field directly on the solar cells to simulate the PID process of the modules. The process was named as electric field treatment (EFT). The effect of the applied EFT voltage on the solar cells was investigated from 1 to 1.8 KV. The degradation rate of the solar cells increased with increase in EFT voltage. The result of the energy dispersive spectrometer showed that the sodium element was found in the shunt area of the cell. It indicated that the microscopic principle of the power loss of the cell caused by the EFT was in accordance with that of the traditional PID. The electric performances of the cells treated by EFT showed that the PID test time can be accelerated to less than 8 h.