• K L Narasimhan

      Articles written in Bulletin of Materials Science

    • Investigation on schottky diodes on amorphous hydrogenated silicon

      SM Pietruszko K L Narasimhan S Guha

      More Details Abstract Fulltext PDF

      Schottky barrier diodes with near-ideal characteristics have been fabricated on amorphous hydrogenated silicon prepared by decomposition of a mixture of 10% silane and 90% hydrogen. The interface properties are found to be stable up to heat treatment of 300°C. From a detailed investigation of dark and photovoltaic properties it is concluded that the density of states in the mobility gap is sufficiently small so that there is no significant carrier recombination in the space charge region.

    • Active area cell efficiency (19%) monocrystalline silicon solar cell fabrication using low-cost processing with small footprint laboratory tools

      PRABIR K BASU SANDEEP KUMBHAR K P SREEJITH TARUN S YADAV ANIL KOTTANTHARAYIL B M ARORA K L NARASIMHAN ASHOK K SHARMA

      More Details Abstract Fulltext PDF

      A high efficiency (>18%) industrial large area crystalline silicon wafer solar cell fabrication process generally requires industrial equipment with large footprint, high capital and running costs. Stricter processing window, continuousmonitoring and automated functioning are the reasons for it. However, for any conventional laboratory (lab) it is always difficult to manage these requirements with limited available lab space or insufficient fund and other related resources. In this work, we report a novel way to fabricate high efficiency full area aluminium back surface field monocrystalline silicon wafer solar cells in our lab using low-cost processing with small-footprint fabrication tools for 6 inch pseudo-square industrial wafers. The novelty of our work includes optimization of every fabrication process step, e.g., texturization, emitter diffusion, emitter passivation and anti-reflection coating deposition, edge-isolation, screen printing and co-firing individually. These modifications include tuning of processing tools and processes, utility changes and inclusion of additional process steps.Beaker-based chemical processes, manual diffusion furnace, introduction of low temperature oxidation, low temperature silicon nitride deposition processes, plasma-edge isolation tool, single manual screen printer, single oven drying of metal pastes and co-firing using rapid thermal processing tools were used at our lab. For our cells, actual and active area efficiencies of 18.5 and 19% (measured under AM1.5G 1 Sun condition), respectively, were achieved.

  • Bulletin of Materials Science | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.