• K Krishan

      Articles written in Bulletin of Materials Science

    • Computer simulation of defects and radiation damage

      K Krishan B Purniah S Srinivasan

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      In this paper, we describe the computer simulation technique and its application to the study of radiation damage. Details of two important methods: the static and the dynamic methods have been discussed. Applications to the study of point defect formation and stability, their clusters, diffusion, dislocations and dislocation-point defect interaction are discussed drawing from our own work wherever possible. A short mention is made of the importance of the interatomic potential. Examples for the case of magnesium and other hcp metals, bcc iron and fcc Ni are cited and numbers for various quantities like formation energy, dipole tensor, interaction energy etc are quoted.

    • SIMS depth profiling of implanted helium in Al-Mn alloy using CsHe+ molecular ion detection

      A K Tyagi K G M Nair K Krishan

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      The use of Cs+ primary ions in conjunction with the detection of CsHe+ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in Al60Mn40 alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM.

    • Crystalline to amorphous transformation during irradiation

      K G M Nair K Krishan

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      Amorphization is often observed during irradiation of intermetallic compounds with energetic charged particles or neutrons. This paper discusses various mechanisms of radiation induced amorphization and also presents the results of amorphization in Al-Mn alloys.

    • Phase instabilities during Ti-nitride precipitation in nitrogen implanted Ti-6AI-4V alloy

      N Rajan T S Sampath Kumar K G M Nair K Krishan

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      Grazing incidence X-ray diffraction, performed on a 70 keV nitrogen implanted Ti-6Al-4V system, reveals phase instabilities, during the course of nitride formation. With the build up of unbound N atom concentration, for a dose of 1×1016 ions/cm2, the surface region becomesα-rich, whereas, on precipitation of Ti-nitrides at a high dose of 1×1017 ions/cm2, theβ-Ti phase reappears, at the surface and beyond the implanted zone. The low concentration of V and the strain in the nitrided zone, have led to radiation induced martensitic transformation of theβ-Ti phase.

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    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

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      Posted on July 25, 2019

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