The use of Cs⁺ primary ions in conjunction with the detection of CsHe⁺ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in Al₆₀Mn₄₀ alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM.

Dynamic and non-equilibrium effects involving interaction between deuterium and radiation produced defects were studied during deuterium implantation of Cu and Ti. The technique of neutron yield measurement during deuterium implantation was employed and theoretical analysis was made to study the dynamics. SIMS, GIXRD and SEM studies on deuterium implanted samples were employed to study the evolution of implanted deuterium profiles, structure of deuterides and surface topography respectively.

CdS thin films prepared by chemical bath deposition technique are characterized using X-ray diffraction, optical absorption spectrometry and scanning electron microscopy. The results of the annealing studies on the films in flowing argon and air atmospheres are also presented in this paper. The resistivity has drastically reduced on annealing in flowing air which is attributed to the partial conversion of CdS to CdO phase.

Amorphization is often observed during irradiation of intermetallic compounds with energetic charged particles or neutrons. This paper discusses various mechanisms of radiation induced amorphization and also presents the results of amorphization in Al-Mn alloys.

Grazing incidence X-ray diffraction, performed on a 70 keV nitrogen implanted Ti-6Al-4V system, reveals phase instabilities, during the course of nitride formation. With the build up of unbound N atom concentration, for a dose of 1×10¹⁶ ions/cm², the surface region becomesα-rich, whereas, on precipitation of Ti-nitrides at a high dose of 1×10¹⁷ ions/cm², theβ-Ti phase reappears, at the surface and beyond the implanted zone. The low concentration of V and the strain in the nitrided zone, have led to radiation induced martensitic transformation of theβ-Ti phase.