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    • K A Pathan

      Articles written in Bulletin of Materials Science

    • Volume 17 Issue 5 October 1994 pp 493-498

      Dielectric properties of Fe(OH)3 thin films formed at solution-gas interface

      P S Nikam K A Pathan

      More Details Abstract Fulltext PDF

      Dielectric properties of solution-gas interface-formed Fe(OH)3 thin-film capacitors (Al/Fe(OH)3/Al) of various thicknesses have been studied in the frequency range 10–106 Hz at various temperatures (300–443 K). Dielectric constant, ε, increases with increasing film thickness (d) and temperature (T) and decreases with increase of frequency (f). The loss factor (tan δ), showing pronounced minimum with frequency, increases with rise of temperature, and tan δmin shifts to a higher frequency. The large increase in dielectric constant towards low frequency region indicates the possibility of an interfacial polarization mechanism in this region.

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