Articles written in Bulletin of Materials Science

    • Behaviour of Raman B$_1$ (high) mode and evaluation of crystalline quality in the In$_x$Ga$_{1–x}$N alloys grown by RF-MBE


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      In$_x$Ga$_{1–x}$N ternary alloys are very promising for a variety of applications. However, high-quality growth of In$_x$Ga$_{1–x}$N alloys, particularly in the intermediate In composition range, is very difficult. This study reports on a systematic analysis of the Raman spectra from the In$_x$Ga$_{1–x}$N alloys grown by radio-frequency molecular beam epitaxy (RF-MBE)for the whole In compositional range, particularly in the intermediate range of In composition. The B$_1$ (high) mode, which is inherently Raman inactive is observed for the In$_x$Ga$_{1–x}$N alloys grown by RF-MBE. The behaviour of Raman inactive B$_1$ (high) mode is studied for the evaluation of In$_x$Ga$_{1–x}$N quality, which is found to vary with the In composition and thetemperature of growth. The crystallinity of the In$_x$Ga$_{1–x}$N alloys can be assessed using B$_1$ (high) mode’s relative signal intensity and full-width at half-maximum, which are well agreed with the reflection high energy electron diffraction and X-ray diffraction analyses. The optimum growth temperature for the In$_x$Ga$_{1–x}$N alloys grown by RF-MBE in the intermediate range of In composition is also discussed.

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