K Gopalakrishna Naik
Articles written in Bulletin of Materials Science
Volume 34 Issue 7 December 2011 pp 1645-1648
The photoluminescence study of Fermi-edge singularity (FES) in modulation-doped pseudomorphic Al𝑥Ga1–𝑥As/In𝑦Ga1–𝑦As/GaAs quantum well (QW) heterostructures is presented. In the above QW structures the optical transitions between 𝑛 = 1 and 𝑛 = 2 electronic subband to the 𝑛 = 1 heavy hole subband (𝐸11 and 𝐸21 transitions, respectively) are observed with FES appearing as a lower energy shoulder to the 𝐸21 transition. The observed FES is attributed to the Fermi wave vector in the first electronic subband under the conditions of population of the second electronic subband. The FES appears at about 10 meV below 𝐸21 transition around 4.2 K. Initially it gets stronger with increasing temperature and becomes a distinct peak at about 20 K. Further increase in temperature quenches FES and reaches the base line at around 40 K.
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